organizer: prof. Fernanda Irrera
November 8, 2019 - 15:00, DIET Sala Riunioni 2° Floor, SPV
Silicon Carbide (SiC) has superior properties as a semiconductor material when discussing electrical field strength, thermal conductivity and high temperature capability. The current status of SiC technology for power devices/drivers and high temperature operation will be introduced. Examples of efficient SiC power devices capable of handling up to 20 kV breakdown voltage and integrated SiC devices capable of handling up to 500C will be discussed.