CV Maria Gambelli
PhD Candidate in Materials Science, PhD program in Mathematical Models for Engineering, Electromagnetism, and Nanosciences, Sapienza University of Rome.
Research Activities:
Development of innovative photonic and optoelectronic devices based on SiGe/Ge semiconductor heterostructures embedded in resonant microcavities. Specifically, I work on the micro- and nanofabrication and on the characterization of the realized devices. The fabrication activities involve electron beam lithography, plasma etching using ICP (Inductively Coupled Plasma), and thin-film deposition via electron beam evaporation. The characterization is carried out using THz spectroscopy at both room temperature and low temperatures.
RESEARCH EXPERIENCE
03/2024 - 10/2024: Research Grant at the Institute for Photonics and Nanotechnology (IFN), National Research Council (CNR), within the PRIN 2022 project "Strong light-matter coupling manipulation in SiGe quantum wells at terahertz frequencies."
Topic: Design, fabrication process and characterization of resonant cavities for strong matter coupling experiment in SiGe quantum wells at Terahertz frequency.
EDUCATION
01/2024: Master's Degree in Nanotechnology Engineering (LM-53), Sapienza University of Rome.
Final grade: 110/110 with honors.
Thesis Title: Fabrication and characterization of Transition Edge Sensors for particle background reduction.
Thesis conducted in collaboration with: Institute for Photonics and Nanotechnology (IFN-CNR) and Institute for Space Astrophysics and Planetology (IAPS-INAF).
Activities: Fabrication of bilayers made by Titanium-Gold thin films for the realization of the sensitive element of cryogenic detectors Transition Edge Sensors (TES) for charged particles. The fabrication was conducted using electron beam lithography and electron beam evaporation techniques. Electrical characterization was performed through cryogenic measurements using a dilution cryostat. A preliminary study of the aging phenomenon in the realized bilayers samples was carried out.
07/2020: Bachelor’s Degree in Electronic Engineering (L-8), Roma Tre University.
Final grade: 110/110.